IPI65R110CFD

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IPI65R110CFD datasheet

• Маркировка
  IPI65R110CFD
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPI65R110CFD RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 31.2 A Resistance Drain-Source RDS (on): 0.11 Ohms at 10 V Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-262-3 Fall Time: 6 nS Gate Charge Qg: 118 nC Minimum Operating Temperature: - 55 C Power Dissipation: 277.8 W Rise Time: 11 nS Typical Turn-Off Delay Time: 68 nS Part # Aliases: IPI65R110CFDXK IPI65R110CFDXKSA1 SP000896398
• Количество страниц
  20 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

Скачать datasheet IPI65R110CFD.pdf
Файл формата Pdf 2,91 MB